发明名称 Phase-change memory element and method of storing data therein
摘要 A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.
申请公布号 US6859390(B2) 申请公布日期 2005.02.22
申请号 US20040755169 申请日期 2004.01.09
申请人 OVONYX, INC. 发明人 PASHMAKOV BOIL
分类号 G11C11/34;G11C16/02;G11C16/10;(IPC1-7):G11C11/00 主分类号 G11C11/34
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