| 发明名称 |
PRODUCTION OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To miniaturize the element by covering the conductive electrodes formed through insulation film with a thick oxide film through the utilization of a Si3N4 film formed by heating a Si substrate at above 1 atmospheric pressure in an atmosphere containing N2, and forming connection holes through self-alignment. |
| 申请公布号 |
JPS53139977(A) |
申请公布日期 |
1978.12.06 |
| 申请号 |
JP19770054285 |
申请日期 |
1977.05.13 |
| 申请人 |
HITACHI LTD |
发明人 |
KOYANAGI MITSUMASA;TANIDA YUUJI;IIJIMA SHINPEI |
| 分类号 |
H01L27/10;H01L21/316;H01L21/8242;H01L27/108;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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