发明名称 |
Semiconductor integrated circuit devices having inverted frustum-shape contact layers |
摘要 |
Inverted frustum shaped polycrystalline semiconductor layers are formed on the emitter and collector regions provided on one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.
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申请公布号 |
US4128845(A) |
申请公布日期 |
1978.12.05 |
申请号 |
US19760706596 |
申请日期 |
1976.07.19 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP. |
发明人 |
SAKAI, TETSUSHI |
分类号 |
H01L21/3205;H01L21/225;H01L21/28;H01L21/285;H01L21/306;H01L21/314;H01L21/331;H01L23/532;H01L29/417;H01L29/43;H01L29/73;(IPC1-7):H01L29/70;H01L23/48 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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