| 摘要 |
<p>PURPOSE:To reduce short-circuit defects between wirings and to remarkably shorten a manufacturing process by a method wherein an interface between indium tin oxide(ITO) and metal of Al or the like, silicon, or metal silicide are thermally treated. CONSTITUTION:An intersection is constituted in such a structure that a gate wiring 1, an oxide 7, an ITO 4, an insulating film 8, and a signal wiring 2 are successively laid from below, and especially the oxide 7 is an oxide formed in such a manner that oxygen contained in the ITO 4 is thermally reacted with the material 1 such as metal of Al or the like, silicon, or silicide layer formed of silicon and metal reacted with each other. This oxide is formed on the wiring 1, whereby short-circuit defects between the wirings 1 and 2 can be remarkably reduced.</p> |
