发明名称 TRIGGERING METHOD OF GATE CONTROLLED SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To make small the gate drive circuit in size and to reduce the cost, by increasing the interrupting capability with the main gate and by performing small current triggering with the auxiliary gate, in a four terminal GTO having the main gate longer for the cathode opposing length and the auxiliary gate shorter for that.
申请公布号 JPS53136468(A) 申请公布日期 1978.11.29
申请号 JP19770051359 申请日期 1977.05.02
申请人 MEIDENSHA ELECTRIC MFG CO LTD;NIPPON INTAANASHIYONARU SEIRIY 发明人 SUEOKA TETSUO;ISHIBASHI SATOSHI;UDAGAWA HISAO
分类号 H02M1/06;H03K17/732 主分类号 H02M1/06
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