发明名称 Structure and process for millimetric wave sources integrated in a radial waveguide
摘要 A structure consisting of a semiconductive device e.g. an IMPATT diode destined to transmit high frequency electromagnetic waves through a radial waveguide integral with the structure, forming a "easy to handle" unit. A fabrication process allowing a large number of units to be made utilizing batch processing techniques, is provided. The process includes forming a plurality of mesa diodes on a semiconductor wafer, coating the wafer with a first insulating layer (filling the intervals between the mesa tables), then depositing on the wafer a plate of a solid dielectric with openings for access to the upper part of diodes. The diodes are spaced enough to allow forming around each of them a radial waveguide using a portion of the solid dielectric for propagation medium and for walls, on one hand a metallization extending the biassing electrodes of the upper parts of diode, and on the other hand, a metallic base supporting the assembly after grinding of the substrate of the wafer. The diameter of the radial waveguide is of the order of one wavelength, measured in the solid medium.
申请公布号 US4126932(A) 申请公布日期 1978.11.28
申请号 US19760727652 申请日期 1976.09.29
申请人 THOMSON-CSF 发明人 CACHIER, GERARD
分类号 H03B9/12;H01L21/78;H01L23/485;H01L23/492;H01L29/06;H01L29/864;H01L47/02;H01P7/00;(IPC1-7):H01P11/00;H01P3/00;H01L21/20;H01L23/50 主分类号 H03B9/12
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