| 摘要 |
A semiconductor device having a bipolar transistor of the lateral type, preferably a pnp-transistor which is provided in a homogeneously doped semiconductor layer and which may be provided both in an n-type and in a p-type semiconductor layer and of which the base comprises a highly doped contact region and an associated substantially non-depleted active base region, while the emitter zone is situated substantially entirely within the active base region. Herewith, high frequency complementary transistors can be formed in a single epitaxial layer. The invention furthermore comprises a suitable method of manufacturing said transistor in which use is made of underetching.
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