发明名称 |
STRUCTURE AND PRODUCTION OF VARIABLE STRIPE WIDTH SEMICONDUCTOR LASER ELEMENT |
摘要 |
PURPOSE:To make a oscillation part narrow with preventing the generation of distortion to an active layer and eliminating the horizontal-direction diffusion of the current which does not contribute to laser oscillation, by subjecting the part near the active layer to slight solid-phase diffusion to limit the current path near the active layer. |
申请公布号 |
JPS53135292(A) |
申请公布日期 |
1978.11.25 |
申请号 |
JP19770050997 |
申请日期 |
1977.04.28 |
申请人 |
SHARP KK |
发明人 |
YAMAMOTO SABUROU;YANO MORICHIKA;KURATA YUKIO;MATSUI KANEKI;KOMURO AKIRA |
分类号 |
H01S5/00;H01S5/042;H01S5/10;H01S5/223 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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