| 摘要 |
A semiconductor device is provided to reduce the neighboring gate effect by expanding a junction region by the lower portion of a gate. A substrate(101) has a first surface and a second surface lower than the first surface. A recess pattern(103) has a predetermined depth between the first and second surfaces. The lower portion of a gate(RG3,RG4) is buried in the recess pattern. A first junction region is formed on the first surface. A second junction region is formed on the second surface. The first junction region can be a source or drain region. The second junction region can be a source or drain region.
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