| 摘要 |
PURPOSE:To enable the pattern formation with high efficiency and high precision even in the case of a thick silicone rubber film by utilizing the flattening characteristics at the time of spin-coating the silicone rubber. CONSTITUTION:A polyimide film 4 is stuck on the whole surface of a wafer wherein Al wiring patterns 3a, 3b are formed on an oxide film 2 of a silicon wafer 1. The polyimide films 4a, 4b are left by eliminating the region except a region turning to the aperture of a silicone rubber film in the later process. The silicone rubber film 5 is spin-coated on the whole surface of the wafer; by etching the whole part of the silicone rubber film 5, the patterned polyimide films 4a, 4b are exposed; by eliminating the patterned polyimide films 4a, 4b, apertures 6a, 6b are formed there. Thereby, the etching amount of the silicone rubber film is remarkably reduced, so that the thick silicone rubber film can be effectively and easily patterned with high dimensional accuracy. |
