发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To avoid punch-through phenomenon, by forming the region having comparatively higher impurity concentration to the part in contact with the first region of the first conduction type being the collector.
申请公布号 JPS53134374(A) 申请公布日期 1978.11.22
申请号 JP19770049385 申请日期 1977.04.28
申请人 SONY CORP 发明人 ASAHINA HIDEO;YAGI HAJIME
分类号 H01L21/331;H01L21/8228;H01L27/082;H01L29/73 主分类号 H01L21/331
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