Semiconductor device with ballast resistor adapted for a transcalent device

摘要

An improvement for a transcalent semiconductor device includes a semiconductor ballast resistor in contact with the emitter regions of a semiconductor transistor. The semiconductor transistor with the ballast resistor in contact therewith is sandwiched between two closed heat pipes wherein one heat pipe is in thermal and electrical contact with the transistor and the other heat pipe is in thermal and electrical contact with the resistor.