| 摘要 |
PURPOSE:To obtain an amorphous silicon solar cell having high photoelectric conversion efficiency by utilizing at least one part of a p<+>-layer film located on the side of incident light or of an n<+>-layer film for performing current collection in parallel with a junction face. CONSTITUTION:A p<+> type muc-SiC film 2 is formed while forming an i-type a-Si film 3 and a n<+>-type muc-SiC film 4 in order on a glass plate 1. The p<+> layer film 2, the i-layer film 3 and the n<+> layer film 4 are formed by using various kinds of gas. The incident light side is the side of the glass plate 1 while the p<+> layer 2 is an electrode on the incident light side and the n<+> layer 4 is a rear electrode. Further, pattern-shaped metal electrodes 7 are provided on the p<+>-layer film 2 on the incident light side or on the incident light side surface of the n<+> layer film 4 in a part of a generation effective area in order to make the incident light side electrode of the p<+>-layer film 2 or the n<+>-layer film 4 and the metal electrodes 7 perform current collecting of a photo current. Thereby, an amorphous silicon solar cell having high photoelectric conversion efficiency can be obtained. |
