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经营范围
发明名称
MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要
PURPOSE:To ensure the selective removal of the SiO2 film more than two times through the photo etching method wothout using the matching mark between the substrate and the mask.
申请公布号
JPS53133376(A)
申请公布日期
1978.11.21
申请号
JP19770049268
申请日期
1977.04.27
申请人
MITSUBISHI ELECTRIC CORP
发明人
INAO HIROYUKI
分类号
H01L21/027;H01L21/302
主分类号
H01L21/027
代理机构
代理人
主权项
地址
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