Semiconductor device having electrode for low pressure bonding and Semiconductor package using the same

摘要

The electrode for the semiconductor device is structurally improved. Therefore, the connection reliability can be improved by using an existing low pressure bonding process in the semiconductor packaging. The semiconductor package comprises the first semiconductor device(100) including the first electrode(110); the second semiconductor device(200) including second electrode(210); the adhesive film electrically bonding with the first and the second electrode, interposed between the first and the second semiconductor device. The first electrode is a plural of bump electrodes of the fine pitch of the desired pattern. The coating layer having Au is formed on the outside surface of the soft metal layer of the electrode. The soft metal layer is made of the gold(Au) or the alloy of Mohs hardness 2.5 or less.