发明名称 INDEXING SCHEME FOR FLASH MEMORY
摘要 <p>An index scheme of a flash memory for modifying, inserting or deleting a leaf node is provided to reduce a access time about the flash memory and to lengthen the lifetime of the flash memory by minimizing the number of filled in. Index nodes related to a leaf node and the leaf node are filled in the same page which is identical in mu-tree(e). The index nodes(C, A) which are the parent nodes of the leaf nodes and leaf node(F) is stored in the page(P1). The leaf node(E) and the index nodes(B, A) are stored in the page(P2). The leaf node(D) and index nodes(B, A) are stored in the page(P3). If the leaf node(E) and index nodes(B, A) are stored in the page(P2), the index node(A) becomes invalid since the index node(A) designates the page in which the index nodes(B, C) are stored.</p>
申请公布号 KR20090002839(A) 申请公布日期 2009.01.09
申请号 KR20070067129 申请日期 2007.07.04
申请人 SAMSUNG ELECTRONICS CO., LTD.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KANG, DONG WON;KANG, JEON GUK;KIM, JIN SOO;PARK, CHAN IK
分类号 G06F9/06;G06F12/00 主分类号 G06F9/06
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