| 摘要 |
A nitride semiconductor light emitting diode having and a manufacturing method thereof are provided to steadily maintain the active layer by blocking the P-dopant diffused to the active layer. A buffer layer(113) is formed on a substrate(111). An undoped GaN layer(115) in which dopant is not doped on the buffer layer is grown. A n-type contact layer(117) is formed on the undoped GaN layer. An active layer(119) of the single-quantum well or the multi-quantum well(MQW) structure is formed on the n-type contact layer. A p-type super lattice layer(120) is formed on the active layer. A p-type contact layer(130) is formed on the p-type super lattice layer.
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