| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To enhance the integration of a writable read-only semiconductor memory device by constituting a memory cell of MIS structure with a thin insulation film provided between semiconductor an metal and writing by breaking the insulation film. |
| 申请公布号 |
JPS53132281(A) |
申请公布日期 |
1978.11.17 |
| 申请号 |
JP19770047073 |
申请日期 |
1977.04.22 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
OKADA KENJI |
| 分类号 |
G11C17/06;G11C17/00;H01L21/8229;H01L27/04;H01L27/102 |
主分类号 |
G11C17/06 |
| 代理机构 |
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代理人 |
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