发明名称 |
VERFAHREN ZUM TRIMMEN DES WIDERSTANDSWERTES POLYKRISTALLINER SILICIUM- WIDERSTAENDE, INSBESONDERE FUER DIE VERWENDUNG ALS HALBLEITER IN INTEGRIERTEN SCHALTKREISEN |
摘要 |
Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit. |
申请公布号 |
DE2819402(A1) |
申请公布日期 |
1978.11.16 |
申请号 |
DE19782819402 |
申请日期 |
1978.05.03 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP. |
发明人 |
AMEMIYA,YOSHIHITO;KATO,KOTARO |
分类号 |
H01L27/04;H01C17/22;H01L21/02;H01L21/326;H01L21/822;H01L27/01;(IPC1-7):H01C17/26 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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