发明名称 VERFAHREN ZUM TRIMMEN DES WIDERSTANDSWERTES POLYKRISTALLINER SILICIUM- WIDERSTAENDE, INSBESONDERE FUER DIE VERWENDUNG ALS HALBLEITER IN INTEGRIERTEN SCHALTKREISEN
摘要 Current having a density higher than a critical value is passed through a polycrystalline resistor doped with impurities at a concentration higher than a critical value to decreasingly correct the initial value of the resistance, thereby trimming the resistance value of the resistor. When the resistor is used in a semiconductor integrated circuit, the current is passed through the existing (not additional) terminals of the integrated circuit.
申请公布号 DE2819402(A1) 申请公布日期 1978.11.16
申请号 DE19782819402 申请日期 1978.05.03
申请人 NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORP. 发明人 AMEMIYA,YOSHIHITO;KATO,KOTARO
分类号 H01L27/04;H01C17/22;H01L21/02;H01L21/326;H01L21/822;H01L27/01;(IPC1-7):H01C17/26 主分类号 H01L27/04
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