| 摘要 |
A semiconductor memory includes: first and second bit lines; a precharge circuit for precharging the first and second bit lines to a predetermined potential; a plurality of memory cells each connected to the first or second bit line, a selected one of the memory cells maintaining or discharging one of the precharged first and second bit lines according to a signal held by the selected memory cell; word lines for selecting the memory cells; first and second reference cells connected to the first and second bit lines, respectively, a selected one of the first and second reference cells discharging the first or second bit line connected to the selected reference cell; and first and second reference cell word lines for selecting the first and second reference cells, respectively.
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