| 摘要 |
An electron emission device includes first and second substrates facing each other with a predetermined distance, cathode electrodes formed on the first substrate, electron emission regions formed on the cathode electrodes, and gate electrodes placed over the cathode electrodes while interposing an insulating layer. The gate electrodes have opening portions exposing the electron emission regions on the first substrate. The electron emission region has a height compensation portion formed on the cathode electrode such that the width of the height compensation portion is reduced in a direction toward the second substrate. An electron emission layer covers the surface of the height compensation portion and contacts the cathode electrode such that the electron emission layer is electrically connected to the cathode electrode.
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