| 发明名称 |
CLOSELY SPACED IC CONTACT STRUCTURE AND MANUFACTURE |
| 摘要 |
<p>Inverted frustum shaped polycrystalline semiconductor layers are formed on the emitter and collector regions provided for one surface of a semiconductor substrate, and conductor layers are applied on the upper surfaces of the polycrystalline semiconductor surfaces to form emitter and collector electrodes thus providing a bipolar transistor for the integrated circuit device.</p> |
| 申请公布号 |
CA1042559(A) |
申请公布日期 |
1978.11.14 |
| 申请号 |
CA19760257488 |
申请日期 |
1976.07.21 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
SAKAI, TETSUSHI |
| 分类号 |
H01L21/3205;H01L21/225;H01L21/28;H01L21/285;H01L21/306;H01L21/314;H01L21/331;H01L23/532;H01L29/417;H01L29/43;H01L29/73;(IPC1-7):01L29/40;01L21/74 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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