首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
CAN OF TOP DYEING
摘要
申请公布号
JPS53130378(A)
申请公布日期
1978.11.14
申请号
JP19770043727
申请日期
1977.04.15
申请人
KANEBO LTD;KAWASAKI HEAVY IND LTD
发明人
OOTAKE SADAO;HAYASHIDA SHIYUUJI;TAMURA JIYUNNOSHIN;FURUBAYASHI HACHIROU
分类号
B65H75/00;D06B3/32;D06B5/12;D06B5/14;D06B23/04
主分类号
B65H75/00
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Plastic Container and Method of Manufacture Having Molded-in-Security Features
Vanadium sesquioxide nanocomposite
FLEXIBLE LOW CURRENT OSCILLATOR FOR MULTIPHASE OPERATIONS
METHOD AND DEVICE FOR DETECTING ELECTRIC POTENTIAL AND ELECTRIC CHARGES IN A PRINTER OR COPIER
METER-MOUNTED EXTENDER
METHODS AND APPARATUS FOR A BAR-WOUND STATOR WITH ROTATED CONDUCTORS
SUPPORT AND HOLDING DEVICE FOR BICYCLE SADDLE
ENERGY ABSORPTION DEVICE
Bumper beam for a vehicle
REVERSE SLIDING SEAL FOR EXPANDABLE TUBULAR CONNECTIONS
METHOD OF MANUFACTURING A PIPE COUPLING COMPONENT, METHOD OF MANUFACUTRING A CASING STRUCTURAL MEMBER, AND PIPE COUPLING STURCTURE FOR A HOLLOW PART
Multi-Task Trailer Hitch Assembly
Clamping Apparatus
METHOD FOR PRODUCING POLYMER MEMBER HAVING PLATED FILM
BOUNDARY ACOUSTIC WAVE DEVICE
HIGH-DENSITY FIXTURE VISE
Method for manufacturing semiconductor device, semiconductor chip, and semiconductor wafer
METHOD FOR FABRICATING ASYMMETRIC DOUBLE-GATE TRANSISTORS BY WHICH ASYMMETRIC AND SYMMETRIC DOUBLE-GATE TRANSISTORS CAN BE MADE ON THE SAME SUBSTRATE
METHODS OF MAKING VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND BIPOLAR JUNCTION TRANSISTORS WITHOUT ION IMPLANTATION AND DEVICES MADE THEREWITH
Ultra-Low Dislocation Density Group III - Nitride Semiconductor Substrates Grown Via Nano- Or Micro-Particle Film
