发明名称 |
CHARGE COUPLED ELEMENT AND PRODUCTION OF THE SAME |
摘要 |
PURPOSE:To obtain barrier regions which are extremely narrow in width and are aligned in position to gate electrode ends and increase the density of devices by providing ion-implanted layers which incline to the side faces of the gate electrodes and the substrate surface and cross the substrate-gate insulation film interface right under the inclined faces, within a semiconductor layer. |
申请公布号 |
JPS53129983(A) |
申请公布日期 |
1978.11.13 |
申请号 |
JP19770045319 |
申请日期 |
1977.04.19 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
EZAKI TAKEYA;HORIUCHI SHIROU;OOSONE TAKASHI |
分类号 |
H01L29/762;H01L21/265;H01L21/339;H01L21/8234;H01L29/417 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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