发明名称 |
MULTI-FINGER TRANSISTOR AND SEMICONDUCTOR DEVICE |
摘要 |
This multi-finger transistor is provided with a circuit that connects in a region, which is outside of an active region (11) and on the side of a drain pad (42), gate fingers (21) or source fingers (31), said circuit suppressing voltage/current distribution, and the multi-finger transistor is line-symmetrically configured by having, as the axis, the propagation direction of signals transmitted from a gate pad (22), said propagation direction being at the position of the gate pad (22). |
申请公布号 |
WO2016098374(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
WO2015JP70686 |
申请日期 |
2015.07.21 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
IMAI, SHOHEI;KUWATA, EIGO;YAMANAKA, KOJI;MAEHARA, HIROAKI;OHTA, AKIRA |
分类号 |
H01L21/338;H01L21/336;H01L21/822;H01L27/04;H01L29/41;H01L29/78;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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