发明名称 MULTI-FINGER TRANSISTOR AND SEMICONDUCTOR DEVICE
摘要 This multi-finger transistor is provided with a circuit that connects in a region, which is outside of an active region (11) and on the side of a drain pad (42), gate fingers (21) or source fingers (31), said circuit suppressing voltage/current distribution, and the multi-finger transistor is line-symmetrically configured by having, as the axis, the propagation direction of signals transmitted from a gate pad (22), said propagation direction being at the position of the gate pad (22).
申请公布号 WO2016098374(A1) 申请公布日期 2016.06.23
申请号 WO2015JP70686 申请日期 2015.07.21
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 IMAI, SHOHEI;KUWATA, EIGO;YAMANAKA, KOJI;MAEHARA, HIROAKI;OHTA, AKIRA
分类号 H01L21/338;H01L21/336;H01L21/822;H01L27/04;H01L29/41;H01L29/78;H01L29/812 主分类号 H01L21/338
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