发明名称 |
LEVEL SHIFT CIRCUIT, INTEGRATED CIRCUIT, AND POWER SEMICONDUCTOR MODULE |
摘要 |
A primary side circuit (2a) outputs, corresponding to an input signal (IN), a first signal at a first reference potential (GND). A level shift main circuit (3) outputs a second signal at a second reference potential (VS) by converting the reference potential (GND) of the first signal received from the primary side circuit (2a) into a second reference potential (VS). A secondary side circuit (4a) generates, using the second signal, an output signal (OUT) at the second reference potential (VS). At least one rectifying element circuit (23) is provided between the primary side circuit (2a) and the secondary side circuit (4a). The primary side circuit (2a) and/or the secondary side circuit (4a) has at least one detection circuit (24, 25) that detects whether a potential (VE2) corresponding to the second reference potential (VS) is equal to or lower than a potential (VE1) corresponding to the first reference potential (GND) by detecting a change of a current flowing in the rectifying element circuit (23). |
申请公布号 |
WO2016098196(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
WO2014JP83404 |
申请日期 |
2014.12.17 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
HOKAZONO KAZUYA;YAMAMOTO AKIHISA;WANG DONG |
分类号 |
H03K19/0185;H01L21/822;H01L27/04 |
主分类号 |
H03K19/0185 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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