| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To reduce the amount of the heavy metal to be mixed into the substrate as well as to decrease the crystal fault caused through the thermal treatment in the process during which the element or the circuit is formed to the semiconductor substrate. |
| 申请公布号 |
JPS53128986(A) |
申请公布日期 |
1978.11.10 |
| 申请号 |
JP19770043527 |
申请日期 |
1977.04.18 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
HARADA NOZOMI |
| 分类号 |
H01L27/10;H01L21/331;H01L21/339;H01L21/8242;H01L27/108;H01L29/02;H01L29/40;H01L29/417;H01L29/73;H01L29/762;H01L29/78 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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