| 发明名称 |
SEMICONDUCTOR MEMORY |
| 摘要 |
<p>Semiconductor memory device in which charge carriers are injected between a semiconductor surface and a gate electrode separated from the semiconductor surface by an insulating layer to effect a change in the characteristics of the device.</p> |
| 申请公布号 |
JPS53127277(A) |
申请公布日期 |
1978.11.07 |
| 申请号 |
JP19780025550 |
申请日期 |
1978.03.08 |
| 申请人 |
PHILIPS NV |
发明人 |
KORUNERISU ARUBERUTASU POTSUSE;OROFU ERIKU HANSU KURAABEERU;YAN FURORASU UERUBEI;YOHANESU GERITSUTO FUAN SANTEN |
| 分类号 |
G11C17/00;G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C17/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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