| 摘要 |
PURPOSE:To make it possible to reliably remove an Si-containing resin layer without giving damage on a substrate by a method wherein a material having absorptive property against an excimer laser beam is used in the Si-containing resin layer or the layer lower than the resin layer. CONSTITUTION:A resist, having an excimer laser beam absorbing substance, is coated on a polycrystalline silicon film 22, a resist layer 23 is insolubilized by baking and the irradiation of far-ultraviolet rays, and a two-layer resist lower layer is formed. Then, said lower layer is coated with resin resist containing silicon, and after a hot-plate baking has been conducted, an upper resist layer 25 is obtained by patterning and developing. Using this layer as a mask, the lower layer resist 23 is selectively etched, and the polycrystalline silicon film 22 is selectively etched using a mask consisting of the laminated layer of the upper layer 25 and the lower layer 23. Besides, when an excimer laser beam 10 is projected from above the masks 23 and 25, the lower resist layer 23 is scattered in an explosive manner, and the upper resist layer 25 is also peeled off simultaneously. As a result, a multilayer resist containing Si can be exfoliated without giving damage on the substrate. |
