发明名称 |
Storage device and reliability verification method |
摘要 |
A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device. |
申请公布号 |
US9406390(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201514731779 |
申请日期 |
2015.06.05 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Kyungryun;Kim Taehoon;Moon Sangkwon |
分类号 |
G11C11/34;G11C16/28;G11C16/34 |
主分类号 |
G11C11/34 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A storage device comprising:
a nonvolatile memory device including a plurality of memory blocks; and a memory controller configured to control the nonvolatile memory device, wherein in response to a read request identifying a memory block among the plurality of memory blocks, the memory controller is configured to execute a reliability verification operation directed to the memory block in response to one of a read count and an environmental information, and the read count and a state information associated with an unselected word line. |
地址 |
Suwon-si, Gyeonggi-do KR |