ISOLIERSCHICHT-FELDEFFEKT-HALBLEITERELEMENTE, SCHALTUNGSANORDNUNGEN MIT DERARTIGEN HALBLEITERELEMENTEN UND VERFAHREN ZUR HERSTELLUNG DIESER HALBLEITERELEMENTE

摘要

An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.