| 摘要 |
The present invention relates to a semiconductor light emitting device and, more specifically, to a semiconductor light emitting device including a via hole structure for improving current dispersion. The semiconductor light emitting device includes a light emitting structure in which a conductive substrate, a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer are stacked. A diffusion metallic layer and an insulation layer are formed between the conductive substrate and the second conductive semiconductor layer, and a reflective electrode is formed in the lower portion of the second conductive semiconductor layer. |
