| 发明名称 |
Method of producing semiconductor device |
| 摘要 |
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming a first insulation film and selectively forming a second insulation film on predetermined portions of the first insulation film by the use of a polycrystalline silicon film as the mask.
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| 申请公布号 |
US4123564(A) |
申请公布日期 |
1978.10.31 |
| 申请号 |
US19760746897 |
申请日期 |
1976.12.02 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO., LTD. |
发明人 |
AJIMA, TAKASHI;TAKAOKI, KIYOSHI;YONEZAWA, TOSHIO |
| 分类号 |
H01L29/73;H01L21/283;H01L21/314;H01L21/316;H01L21/321;H01L21/3213;H01L21/331;H01L21/8222;(IPC1-7):B05D5/12;H01L21/22 |
主分类号 |
H01L29/73 |
| 代理机构 |
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