发明名称 |
Mercury chalcogenide contact for semiconductor devices |
摘要 |
An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evaporation. The resulting contact is stable in the atmosphere, and is more electronegative than the best contact material, namely gold, that is now used.
|
申请公布号 |
US4123295(A) |
申请公布日期 |
1978.10.31 |
申请号 |
US19770759350 |
申请日期 |
1977.01.14 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
MCCALDIN, JAMES O.;BEST, JOHN S. |
分类号 |
H01L21/443;H01L29/22;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/443 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|