发明名称 |
PHOTOMASK MANUFACTURING METHOD, LITHOGRAPHY APPARATUS, PHOTOMASK INSPECTING METHOD, PHOTOMASK INSPECTING APPARATUS, AND DISPLAY DEVICE MANUFACTURING METHOD |
摘要 |
Provided is a method of fabricating a photomask which can improve the precision of the coordinates of a pattern to be formed on a substrate. The method of fabricating a photomask of the present invention comprises: a process for preparing pattern design data A; a process for preparing thickness distribution data T which represents the thickness distribution of a wafer; a process for preparing transfer surface shape data C which represents the shape of a primary surface when a photomask is mounted on an exposure apparatus; a process for obtaining drawing difference data F by using the thickness distribution data T and the transfer surface shape data C; a process for obtaining drawing coordinate displacement data G by computing coordinate displacement amounts with respect to multiple points on the primary surface, corresponding to the drawing difference data F; and a drawing process for drawing on a photomask blank by using the drawing coordinate displacement amount data G and the pattern design data A. |
申请公布号 |
KR20160102123(A) |
申请公布日期 |
2016.08.29 |
申请号 |
KR20160017997 |
申请日期 |
2016.02.16 |
申请人 |
HOYA CORPORATION |
发明人 |
KEMMOCHI DAISUKE |
分类号 |
G03F1/76;G03F1/44;G03F1/66;G03F7/20 |
主分类号 |
G03F1/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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