TMR device with novel free layer structure

摘要

A method of fabricating a TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is <100 Angstroms. The TMR sensor may be annealed with a one step or two step process. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.

主权项

1. A method of forming a sensor element in a magnetic device, comprising:
(a) sequentially forming a stack of layers comprised of a seed layer, anti-ferromagnetic (AFM) layer, and a SyAP pinned layer having an AP2/coupling/AP1 configuration on a substrate wherein the AP2 layer contacts said AFM layer; (b) forming a tunnel barrier having a first surface that contacts the AP1 layer and a second surface opposite the first surface; (c) forming a composite free layer on the tunnel barrier, the composite free layer is comprised of:
(1) at least one CoFeB, CoFeBTb, CoB, CoBTb, or CoBTbL layer having a first thickness and where L is one of Ni, Ta, Ti, W, Zr, Hf, or Nb, and said at least one CoFeB, CoFeBTb, CoB, CoBTb, or CoBTbL layer is formed in an alternating configuration with the plurality of CoFeTb, or CoFeTbL layers; and(2) the plurality of CoFeTb, or CoFeTbL layers each having a second thickness less than the first thickness, and one of the CoFeTb, or CoFeTbL layers contacts said second surface of the tunnel barrier; and (d) forming a capping layer on the composite free layer.