| 发明名称 | Method of manufacture of advanced heterojunction transistor and transistor laser | ||
| 摘要 | Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein. | ||
| 申请公布号 | US9437772(B2) | 申请公布日期 | 2016.09.06 |
| 申请号 | US201414217022 | 申请日期 | 2014.03.17 |
| 申请人 | Kim Matthew H. | 发明人 | Kim Matthew H. |
| 分类号 | H01L33/00;H01L29/20;H01L29/66;H01L29/737;H01L29/10;H01S5/062;H01S5/183;H01S5/34;H01S5/343;H01S5/02 | 主分类号 | H01L33/00 |
| 代理机构 | Bryan Cave LLP | 代理人 | Bryan Cave LLP |
| 主权项 | 1. A heterojunction bipolar transistor comprising: a GeSn base region; an emitter base junction comprising a first conduction band offset; and a base collector junction comprising a second conduction band offset; wherein: the first conduction band offset is less than 0.1 electron volts; andthe second conduction band offset is less than 0.1 electron volts. | ||
| 地址 | Scottsdale AZ US | ||