发明名称 PRODUCTION OF SEMICONDUCTOR UNIT
摘要 <p>PURPOSE:To improve the yield by sticking a photo-resistor film throughout the face of the mesa-type semiconductor substrate coated with an insulating film and and carving a cutting groove through this film by laser beam and etching to remove thermal distortion, crack, cut, etc., while using the resistor film as a mask.</p>
申请公布号 JPS53123657(A) 申请公布日期 1978.10.28
申请号 JP19770038862 申请日期 1977.04.04
申请人 NIPPON ELECTRIC CO 发明人 SAITOU MASATAKE;ANDOU HIDEYUKI
分类号 H01L21/301;H01L21/302;H01L21/306;H01L21/31;H01L21/316;H01L21/78 主分类号 H01L21/301
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