MOSFET IC AND METHOD OF PRODUCING SAME,申请号JP19780038018-传众专利搜索

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发明名称	MOSFET IC AND METHOD OF PRODUCING SAME
摘要
申请公布号	JPS53123680(A)	申请公布日期	1978.10.28
申请号	JP19780038018	申请日期	1978.03.31
申请人	NAT SEMICONDUCTOR CORP	发明人	TOOMASU KUREIN
分类号	H01L27/04;H01L21/822;H01L21/8234;H01L21/8236;H01L27/088;H01L29/78	主分类号	H01L27/04
代理机构		代理人
主权项
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