Method and apparatus for lithographic mask production

摘要

An electro-deposition apparatus deposits a first pattern of a lithographic mask. The electro-deposition apparatus then deposits a second pattern of the lithographic mask, at least partially offset from the first pattern. The resulting lithographic mask includes a first pattern having a minimum feature resolution size and maximum pitch, and a second pattern having the same minimum feature resolution size and maximum pitch. The first pattern and second pattern are at least partially offset such that a fractional portion of the second pattern is realized and light transmission is more precisely controlled.

主权项

1. A lithographic mask production apparatus comprising:
a processor; memory connected to the processor; a mandrel connected to the processor; a mask material deposition element defining a minimum feature resolution; and computer executable program code configured to execute on the processor, wherein the computer executable program code is configured to:
determine a first lithographic pattern, the first lithographic pattern comprising the minimum feature resolution, and a second lithographic pattern, the second lithographic pattern comprising the minimum feature resolution;position and orient the first lithographic pattern and the second lithographic pattern such that, when combined, the combined lithographic pattern comprises overlaps having transmission properties different from either the first lithographic pattern and the second lithographic pattern, the combined first lithographic pattern and second lithographic pattern defining at least one open space less than the minimum feature resolution;deposit material corresponding to the first lithographic pattern through the mask material deposition element;move the mandrel to offset the deposited material corresponding to the first lithographic pattern; anddeposit material corresponding to the second lithographic pattern through the mask material deposition element.