发明名称 Proximity sensor with light blocking compound
摘要 A sensor comprising a light emitter and light detector directly covered and encapsulated by a layer of light blocking compound. The light blocking compound can be thick enough between the light emitter and light detector to block substantially all light emitted by the light emitter from reaching the light detector directly, but be thin enough above the light emitter and light detector to allow at least some level of light emitted by the light emitter to escape out of the sensor, be reflected by another object, re-enter the sensor, and survive passing through the light blocking compound to enter the light detector.
申请公布号 US9442216(B1) 申请公布日期 2016.09.13
申请号 US201514668805 申请日期 2015.03.25
申请人 HANA MICROELECTRONICS, INC. 发明人 Kwangkaew Vanapong;Chansawang Krisadayut;Silapapipat Sirirat;Bootwicha Preecha;Mitra Sanjay
分类号 G01J5/00;G01V8/12;H05K3/30;H05K3/28;G01S7/02;G01S7/481 主分类号 G01J5/00
代理机构 West & Associates, A PC 代理人 West & Associates, A PC ;West Stuart J.;Sluman Shaun N.
主权项 1. A sensor, comprising: an infrared light emitter mounted on a first position on a base; an infrared light detector mounted on a second position on said base; and a layer of infrared light blocking compound above said base, such that said infrared light blocking compound directly covers and encapsulates said infrared light emitter and said infrared light detector, wherein said infrared light blocking compound has a first thickness above said infrared light emitter at which infrared light emitted by said infrared light emitter towards the top of said light blocking compound at least partially survives passing through said infrared light blocking compound, wherein said infrared light blocking compound has a second thickness above said infrared light detector at which infrared light entering said infrared light blocking compound at least partially survives passing through said infrared light blocking compound to said infrared light detector, and wherein said infrared light blocking compound has a third thickness between said infrared light emitter and said infrared light detector that is larger than said first thickness and said second thickness, such that said infrared light blocking compound blocks transmission of substantially all infrared light traveling directly from said infrared light emitter to said infrared light detector.
地址 Santa Clara CA US