| 发明名称 |
VAPOR PHASE GROWTH METHO OF GAAS |
| 摘要 |
PURPOSE:To reduce the temperature dependency of the rate of growth by using triethyl Ga and arsine and introducing As:Ga into a reaction chamber by making the molar ratio thereof 7 to 10. |
| 申请公布号 |
JPS53123073(A) |
申请公布日期 |
1978.10.27 |
| 申请号 |
JP19770037737 |
申请日期 |
1977.04.01 |
| 申请人 |
NIPPON ELECTRIC CO |
发明人 |
TANNO YUKINOBU |
| 分类号 |
C30B25/02;C23C16/30;C30B29/40;C30B29/42;H01L21/205 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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