发明名称 |
Positive resist for high energy radiation |
摘要 |
A film of poly(methacrylamide) is heated to partially form imide bonds with elimination of ammonia, and such imide bonding causes crosslinking in the polymer to form a crosslinked polymer film. This film can be advantageously adapted as a positive resist capable of forming a positive image by exposure to radiation such as electron beams. The minimum incident charge required for such exposure is of the order of 10-7 coulomb/cm2, which is far lower than the level required in the use of conventional resists. The resist provided according to this invention is also capable of forming an excellent heat-resistant positive resist image by short-time exposure to radiation.
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申请公布号 |
US4121936(A) |
申请公布日期 |
1978.10.24 |
申请号 |
US19770805907 |
申请日期 |
1977.06.13 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., INC. |
发明人 |
MATSUDA, SHUNSUKE;TSUCHIYA, SOJI;HONMA, MASAMI;NAGAMATSU, GENTARO |
分类号 |
G03F7/004;C08F2/00;C08F2/48;C08F8/00;C08J3/28;G03F7/039;H01L21/027;(IPC1-7):G03C1/68 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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