发明名称 Positive resist for high energy radiation
摘要 A film of poly(methacrylamide) is heated to partially form imide bonds with elimination of ammonia, and such imide bonding causes crosslinking in the polymer to form a crosslinked polymer film. This film can be advantageously adapted as a positive resist capable of forming a positive image by exposure to radiation such as electron beams. The minimum incident charge required for such exposure is of the order of 10-7 coulomb/cm2, which is far lower than the level required in the use of conventional resists. The resist provided according to this invention is also capable of forming an excellent heat-resistant positive resist image by short-time exposure to radiation.
申请公布号 US4121936(A) 申请公布日期 1978.10.24
申请号 US19770805907 申请日期 1977.06.13
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., INC. 发明人 MATSUDA, SHUNSUKE;TSUCHIYA, SOJI;HONMA, MASAMI;NAGAMATSU, GENTARO
分类号 G03F7/004;C08F2/00;C08F2/48;C08F8/00;C08J3/28;G03F7/039;H01L21/027;(IPC1-7):G03C1/68 主分类号 G03F7/004
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