Integrated circuit network formation - using a sequence of deposition and removal of layers of silicon, aluminium and silica

摘要

An adherent continuous layer of SiO2 is formed on the principal surface of a block of first-conductivity type semiconductor material (Si). An opening is made in the SiO2 layer and opposite-conductivity-type-imparting dopant impurity is diffused into the substrate through the opening. A continuous layer of conducting metal including a certain amt. of Si is deposited onto the SiO2 layer at 200-400 degrees C. Metal is removed chemically from selected regions of the conductive layer, leaving a residual deposit of Si obtd. at the end of the step. A new continuous, adherent layer of SiO2 is finally formed on the principal surface of the block. The quality of the covering of the principal face of the semiconductor block is improved to such an extent that there is no need to use stepped edges in order to obtain superimposed circuits.