发明名称 WERKWIJZE VOOR HET GALVANISCH VERSTERKEN VAN EEN GELEIDEND BASISPATROON EN INRICHTING VER- KREGEN MET BEHULP VAN DE WERKWIJZE.
摘要 A method of manufacturing a device in which a conductive base pattern is formed on a substrate and is reinforced by electroplating so as to obtain a conductor pattern, characterized in that at least a surface layer of the substrate consists of an electrically insulating material on which an auxiliary layer is provided having a sheet resistance between 1012 and 1017 ohms per square, after which the base pattern is formed on the last-mentioned layer.
申请公布号 NL7704186(A) 申请公布日期 1978.10.20
申请号 NL19770004186 申请日期 1977.04.18
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN TE EINDHOVEN. 发明人
分类号 H05K3/24;C25D5/02;C25D5/54;G11B5/31;H01L21/3205;(IPC1-7):25D5/54;01L21/283 主分类号 H05K3/24
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