发明名称 |
WERKWIJZE VOOR HET GALVANISCH VERSTERKEN VAN EEN GELEIDEND BASISPATROON EN INRICHTING VER- KREGEN MET BEHULP VAN DE WERKWIJZE. |
摘要 |
A method of manufacturing a device in which a conductive base pattern is formed on a substrate and is reinforced by electroplating so as to obtain a conductor pattern, characterized in that at least a surface layer of the substrate consists of an electrically insulating material on which an auxiliary layer is provided having a sheet resistance between 1012 and 1017 ohms per square, after which the base pattern is formed on the last-mentioned layer. |
申请公布号 |
NL7704186(A) |
申请公布日期 |
1978.10.20 |
申请号 |
NL19770004186 |
申请日期 |
1977.04.18 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN TE EINDHOVEN. |
发明人 |
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分类号 |
H05K3/24;C25D5/02;C25D5/54;G11B5/31;H01L21/3205;(IPC1-7):25D5/54;01L21/283 |
主分类号 |
H05K3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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