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发明名称
INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
PURPOSE:To secure production of MOS transistors of different threshold voltage Vth on the same wafer without adding processes, by forming the gate electrode with the Si layer containing Al in desired amount.
申请公布号
JPS53120281(A)
申请公布日期
1978.10.20
申请号
JP19770034518
申请日期
1977.03.30
申请人
HITACHI LTD
发明人
NARITA KAZUTAKA
分类号
H01L29/78;H01L27/088;H01L29/423;H01L29/43;H01L29/49
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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