Two-phase charge shifting device - has two silicon gate planes produced, with uniform thin gate oxide layer between them

摘要

The device has a buried channel and implanted barriers. After production of a first gate oxide layer and a first Sigate plane, barriers are self-adjustingly implanted through spacings between these gate electrodes. A second gate oxide layer and a second Si-gate are then produced over the spacings in the first plane, so that a uniform thin gate oxide layer lies between the Si-gate of the two planes. Si-gates of the second plane, centred over the spacings in the first Si-gate plane, partly overlap the first plane gates.