| 摘要 |
1528990 Etching MONSANTO CO 29 Dec 1975 [30 Dec 1974] 52955/75 Heading B6J A III-V semi-conductor compound is polished by applying thereto, in an acid environment, an etchant comprising an aqueous solution of a compound which yields free chlorine under acid conditions and simultaneously mechanically polishing said compound. The acid environment may be obtained by the presence of hydrochloric, sulphuric or nitric acid and the compound may be an alkali metal hypochlorite (e.g. Na or K) or a chlorinated cyanuric acid or salt thereof. The acid and the compound may be supplied via lines 17 and 19 respectively to the surface of a polishing pad 13 mounted on a table 11 rotatable about axis 15. The semi-conductor slice 1 may be mounted on a block 3 by retention pad 9 and biased against the pad 13 via spindle 5. Rinsing water may be supplied through line 25. Suitable semiconductor compounds and process conditions are given.
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