Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion

摘要

A high voltage junction isolated integrated circuit having complementary insulated gate field effect and PNP transistors wherein low impurity gradient and concentration N-type source and drain regions of the N-channel device and base region of the PNP are formed in even lower impurity gradient and concentration P-type body regions and collector region respectively which are in an N-substrate.