| 摘要 |
A high-impedance programmable attenuator utilizing field-effect transistor (FET) switching in both the high-impedance and low-impedance sections. In the high-impedance section, hybrid passive attenuator elements are employed to provide attenuation of electrical signals, and both series and shunt forms of active switching are employed to align the appropriate signal paths. The low-impedance amplifier section includes a FET-switched resistive network.
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